CDBDSC10650-G Datasheet





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CDBDSC10650-G Datasheet - Silicon Carbide Power Schottky Diode

CDBDSC10650-G   CDBDSC10650-G  

Datasheet: CDBDSC10650-G datasheet

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Description: Silicon Carbide Power Schottky Diode CDB DSC10650-G Reverse Voltage: 650 V Forwa rd Current: 10 A RoHS Device Features - Rated to 650V at 10 Amps - Short reco very time - High speed switching possib le - High frequency operation. - High t emperature operation. - Temperature ind ependent switching behaviour. - Positiv e temperature coefficient on VF Circui t Diagram C(3) C(1) A(2) 0.409(10.40 ) 0.394(10.00) 0.244(6.20) 0.236(6.00) D-PAK(TO-252) 0.264(6.70) 0.256(6.50) 0.215(5.46) 0.201(5.10) 3 Φ 0.051(1.3 0) 0.043(1.10) 12 0.023(0.58) 0.018(0. 46) 0.012(0.30) Max. 0.091(2.32) 0.089 (2.28) 0.093(2.37) 0.085(2.16) 0.034( 0.86) 0.026(0.66) 0.090(2.29) 0.035(0. 89) 0.114(2.90) 0.100(2.55) 0.023(0.


Manufacture Part Number Description

Comchip

CDBDSC10650-G

Silicon Carbide Power Schottky Diode




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