CED5175/CEU5175
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-55V, -40A, RDS(ON) = 23mΩ @VGS = -10V. RDS(ON) = 28mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package.
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D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO...
