CEF05N6
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 5A, RDS(ON) = 2.4Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220F full-pak for through hole.
D
G
D S CEF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unle...
