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CEJ8218 Transistor Datasheet PDFDual N-Channel Enhancement Mode Field Effect Transistor Dual N-Channel Enhancement Mode Field Effect Transistor |
| Part Number | CEJ8218 |
|---|---|
| Description | Dual N-Channel Enhancement Mode Field Effect Transistor |
| Feature | www. DataSheet. co. kr Dual N-Channel Enha ncement Mode Field Effect Transistor FE ATURES 20V, 6. 5A, RDS(ON) = 23mΩ @VGS = 4. 5V. RDS(ON) = 34mΩ @VGS = 2. 5V. Super High dense cell design for extrem ely low RDS(ON). High power and current handing capability. Lead free product is acquired. S1 *Typical value by desig n G1 *1K D CEJ8218 D G2 *1K S2 D 8 D 7 D 6 D 5 2928-8J 1 2 3 4 S 1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS Pa rameter Drain-Source Voltage Gate-Sourc e Voltage Drain Current-Continuous Drai n Current-Pulsed a TA = 25 C unless ot herwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 U . |
| Manufacture | CET |
| Datasheet |
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| Part Number | CEJ8218 |
|---|---|
| Description | Dual N-Channel Enhancement Mode Field Effect Transistor |
| Feature | www. DataSheet. co. kr Dual N-Channel Enha ncement Mode Field Effect Transistor FE ATURES 20V, 6. 5A, RDS(ON) = 23mΩ @VGS = 4. 5V. RDS(ON) = 34mΩ @VGS = 2. 5V. Super High dense cell design for extrem ely low RDS(ON). High power and current handing capability. Lead free product is acquired. S1 *Typical value by desig n G1 *1K D CEJ8218 D G2 *1K S2 D 8 D 7 D 6 D 5 2928-8J 1 2 3 4 S 1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS Pa rameter Drain-Source Voltage Gate-Sourc e Voltage Drain Current-Continuous Drai n Current-Pulsed a TA = 25 C unless ot herwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 U . |
| Manufacture | CET |
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