N-Channel Enhancement Mode Field Effect Transistor
Description
CEM3254L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 8.0A, RDS(ON) = 25mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. RDS(ON) = 35mΩ @VGS = 2.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLU...
