P-Channel Enhancement Mode Field Effect Transistor FEATURES
-20V, -4.2A, RDS(ON) = 48mΩ @VGS = -4.5V. RDS(ON) = 60mΩ @VGS = -2.5V. RDS(ON) = 78mΩ @VGS = -1.8V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. G
S G SOT-23
CES2331
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ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Vo...
