Diode. CESD5V0D1 Datasheet

CESD5V0D1 Datasheet PDF

Part CESD5V0D1
Description ESD Protection Diode
Feature CESD5V0D1; JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes CESD5V0D1 ESD.
Manufacture JCET
Datasheet
Download CESD5V0D1 Datasheet




CESD5V0D1
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
CESD5V0D1 ESD Protection Diode
SOD-123
DESCRIPTION
The CESD5V0D1 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
FEATURES
z Standoff Voltage:5V
z Low Leakage
z Response Time is Typically < 1 ns
z ESD Rating of Class 3 (> 16 KV) Per Human Body Model
z IEC6100042 Level 4 ESD Protection
z These are PbFree Devices
Maximum Ratings @Ta=25
IEC6100042(ESD)
ESD Voltage
Parameter
Air
Contact
per human body model
Symbol
Limit
±30
±30
30
Total Power Dissipation on FR-5 Board (Note 1)
Thermal Resistance JunctiontoAmbient
PD
RΘJA
250
500
Lead Solder Temperature Maximum (10 Second Duration)
TL 260
Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only.
Functional operation above the recommended. Operating conditions is not implied. Extended exposure to
stresses above the recommended operating conditions may affect device reliability.
1. FR5 = 1.0 x 0.75 x 0.62 in.
Unit
KV
KV
mW
/W
A,Sep,2011



CESD5V0D1
ELECTRICAL CHARACTERISTICS (Ta= 25°C unless otherwise noted)
Symbol
IPP
VC
VRWM
IR
VBR
IT
IF
VF
Ppk
C
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Forward Current
Forward Voltage @ IF
Peak Power Dissipation
Max. Capacitance @VR=0 and f =1MHz
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA)
Device*
Device
Marking
VRWM
(V)
Max
IR (μA)
@ VRWM
Max
VBR (V)
@ IT(Note 2)
Min Max
VC(V)
IT
@Max IPP*
mA Max
IPP(A) +
Max
CESD5V0D1
KE
5
1 6.2 7.3 1.0 21.7 15
*Other voltages available upon request.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
A,Sep,2011







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