MOSFET. CEU63A3 Datasheet

CEU63A3 Datasheet PDF

Part CEU63A3
Description N-Channel MOSFET
Feature CEU63A3; N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 55A, RDS(ON) = 11mΩ @VGS = 10V. RDS.
Manufacture CET
Datasheet
Download CEU63A3 Datasheet




CEU63A3
CED63A3/CEU63A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 55A, RDS(ON) = 11m@VGS = 10V.
RDS(ON) = 14m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
30
±20
55
150
57
0.45
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.2
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2006.Nov
http://www.cetsemi.com



CEU63A3
CED63A3/CEU63A3
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 24A
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 10V, ID = 30A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 45A,
VGS = 10V, RGEN = 24
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 45A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 30A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
30
1
Typ Max Units
1
100
-100
V
µA
nA
nA
3V
8.5 11 m
11 14 m
22 S
2115
405
255
pF
pF
pF
17 35
17.8 35.6
157 226
78 156
33.2 45.4
5.5
8.3
ns
ns
ns
ns
nC
nC
nC
30 A
1.2 V
6
2



CEU63A3
50
VGS=10,8,6,5V
40
CED63A3/CEU63A3
75
60
30
VGS=4V
20
10 VGS=3V
0
01
23
4
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
45
30
15
0
0
25 C
TJ=125 C
-55 C
1234
5
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2400
2000
Ciss
1600
1200
800
400 Coss
Crss
0
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.2 ID=30A
1.9 VGS=10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
102
101
100
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3







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