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CFB1370 Transistor Datasheet PDFPNP Silicon Epitaxial Power Transistor PNP Silicon Epitaxial Power Transistor |
| Part Number | CFB1370 |
|---|---|
| Description | PNP Silicon Epitaxial Power Transistor |
| Feature | Continental Device India Limited
An IS/I SO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019. 2 IS / IECQC 700000 IS / IECQC 750100 PNP S ILICON EPITAXIAL POWER TRANSISTOR CFB1 370 (9AW) TO-220FP Designed For AF Pow er Amplifier. ABSOLUTE MAXIMUM RATINGS( Ta=25deg C) DESCRIPTION SYMBOL VALUE VC BO 60 Collector -Base Voltage VCEO 60 C ollector -Emitter Voltage VEBO 5. 0 Emit ter- Base Voltage IC 3. 0 Collector Curr ent ICP 6. 0 Peak PC 2. 0 Power Dissipati on @ Ta=25 deg C 30 Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperatur e Tstg -55 to +150 Storage Temperature Range ELECTRIC . |
| Manufacture | Continental Device |
| Datasheet |
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| Part Number | CFB1370 |
|---|---|
| Description | PNP Silicon Epitaxial Power Transistor |
| Feature | Continental Device India Limited
An IS/I SO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019. 2 IS / IECQC 700000 IS / IECQC 750100 PNP S ILICON EPITAXIAL POWER TRANSISTOR CFB1 370 (9AW) TO-220FP Designed For AF Pow er Amplifier. ABSOLUTE MAXIMUM RATINGS( Ta=25deg C) DESCRIPTION SYMBOL VALUE VC BO 60 Collector -Base Voltage VCEO 60 C ollector -Emitter Voltage VEBO 5. 0 Emit ter- Base Voltage IC 3. 0 Collector Curr ent ICP 6. 0 Peak PC 2. 0 Power Dissipati on @ Ta=25 deg C 30 Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperatur e Tstg -55 to +150 Storage Temperature Range ELECTRIC . |
| Manufacture | Continental Device |
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