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CGHV96050F2

Wolfspeed
Part Number CGHV96050F2
Manufacturer Wolfspeed
Description GaN HEMT
Published Apr 8, 2021
Detailed Description CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Wolfspeed’s CGHV96050F2 is a gallium ...
Datasheet PDF File CGHV96050F2 PDF File

CGHV96050F2
CGHV96050F2

Overview
CGHV96050F2 50 W, 7.
9 - 9.
6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Wolfspeed’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.
This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies.
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors.
This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal perfor...


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