Diodes. CLAMP0511T Datasheet

CLAMP0511T Datasheet PDF

Part CLAMP0511T
Description Low-Capacitance Bidirectional Micro Packaged TVS Diodes
Feature CLAMP0511T; CLAMP0511T Low-capacitance bidirectional micro-packaged TVS Diodes for ESD Protection CLAMP0511T Lo.
Manufacture WPM
Datasheet
Download CLAMP0511T Datasheet




CLAMP0511T
CLAMP0511T Low-capacitance bidirectional micro-packaged TVS Diodes for ESD Protection
CLAMP0511T
Low-Capacitance Bidirectional Micro Packaged TVS Diodes for ESD Protection
The CLAMP0511T is designed with Weipan Punch-Through process TVS technology to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection
on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital
cameras and many other portable applications where board space comes at a premium. Also because of its low capacitance,
it is suited for use in high frequency designs such as USB 2.0 high speed, VGA, DVI, SDI and other high speed line
applications.
It has been specifically designed to protect sensitive components which are connected to data and transmission lines
from overvoltage caused by ESD(electrostatic discharge), and EFT (electrical fast transients).
Features
Peak Power Dissipation − 50 W (8 x 20 us Waveform)
Stand-off Voltage: 5.0 V
Low capacitance (<6.0pF) for high-speed interfaces
No insertion loss to 1.0GHz
Replacement for MLV (0402)
Protects I/O Port
Low Clamping Voltage
Low Leakage
Low Capacitance
Response Time is < 1 ns
Meets MSL 1 Requirements
ROHS compliant
Solid-state Punch-Through TVS Process technology
WeiPan technology
DFN1006
Main applications
High Speed Line :USB1.0/2.0, VGA, DVI, SDI,
Serial and Parallel Ports
Notebooks, Desktops, Servers
Projection TV
Cellular handsets and accessories
Portable instrumentation
Peripherals
Protection solution to meet
IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC61000-4-4 (EFT) 40A (5/50ns)
Ordering Information
Device
CLAMP0511T
Qty per Reel
5000/10000pcs
Reel Size
7inch
E-mail:support@wpmsemi.com Tel:+86 021-67841922 Fax:+86 021-57621210
Revision: A2.1
www.wpmsemi.com



CLAMP0511T
CLAMP0511T Low-capacitance bidirectional micro-packaged TVS Diodes for ESD Protection
Maximum ratings (Tamb=25Unless Otherwise Specified)
Parameter
Symbol
Peak Pulse Power (tp=8/20μs waveform)
PPPP
ESD Rating per IEC61000-4-2
Contact
Air
Lead Soldering Temperature
TL
Operating Temperature Range
TJ
Storage Temperature Range
Lead Solder Temperature − Maximum (10 Second Duration)
TSTG
TL
Value
50
8
15
260 (10 sec.)
-55 ~ 150
-55 ~ 150
260
Unit
Watts
KV
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
*Other voltages may be available upon request.
1. Non-repetitive current pulse, per Figure 1.
Electrical characteristics ( Tamb=25Unless Otherwise Specified)
Device
VRWM
IR @ VRWM
(uA)
VSB @ 50 mA
(Volts)
VC
@1A
(V) Typ Max
Min
(V)
CLAMP0511T
5.0
0.05
1
5.3 9.0
Junction capacitance is measured in VR=0V,F=1MHz
Capacitance
@ VR = 0 V, 1 MHz (pF)
Typ Max
3.0 6
Symbol
VRWM
VPT
VSB
VC
IT
IRM
IPP
CO
CJ
Parameter
Working Peak Reverse Voltage
Punch-Through Voltage@ IPT
Snap-Back Voltage@ ISB
Clamping Voltage @ IPP
Test Current
Leakage current at VRWM
Peak pulse current
Off-state Capacitance
Junction Capacitance
VSB
VC VPT
VRWM
I
IPP
ISB
IPT
IR
IR
IPT
ISB
IPP
VRWM VPT VC
VSB
V
E-mail:support@wpmsemi.com Tel:+86 021-67841922 Fax:+86 021-57621210
Revision: A2.1
www.wpmsemi.com



CLAMP0511T
CLAMP0511T Low-capacitance bidirectional micro-packaged TVS Diodes for ESD Protection
Typical electrical characterist applications
110
100
90
80
70
60
50
40
30
20
10
0
0
Waveform
Parameters:
tr=8us
td=20us
td=IPP/2
5 10 15 20 25 30
Time (us)
Pulse Waveform
10
1
0.1
0.01
0.1
1 10 100
Pulse Duration-tpus)
1000
Non-Repetitive Peak Pulse Power vs. Pulse Time
110
1 -0.7540 dB
800MHZ
100
90
2 -1.2938 dB
1GHZ
80 3 -3.2504 dB
0 2.5GHZ
3
70 -6 1 2 4 -19.431 dB
60 2.7GHZ
50 -12
40
30
-18
4
20 -24
10 -30
0
0 25 50 75 100 125 150
-36
-42
Ambient Temperature-TA
1
MHZ
10
MHZ
13
GHZ GHZ
Power Derating Curve
Insertion Loss S21
E-mail:support@wpmsemi.com Tel:+86 021-67841922 Fax:+86 021-57621210
Revision: A2.1
www.wpmsemi.com







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