Module. CM100DC-24NFM Datasheet

CM100DC-24NFM Datasheet PDF

Part CM100DC-24NFM
Description IGBT Module
Feature CM100DC-24NFM; www.DataSheet4U.com APPLICATION NOTE MITSUBISHI TENTATIVE CM100DC-24NFM Pre. S.Kaw.
Manufacture Mitsubishi Electric
Datasheet
Download CM100DC-24NFM Datasheet




CM100DC-24NFM
wAwwP.DPaLtaISChAeeTt4IUO.cNom NOTE
MITSUBISHI<IGBT MODULE>
TENTATIVE
CM100DC-24NFM
Pre. S.Kawabata,H.Takemoto,M.Hiyoshi
Apr. Y.Nagashima 1-Dec-'06
Rev
HIGH POWER SWITCHING USE
───────────────────────────────────────────────────
Notice: This is not a final specification. Some parametric limits are subject to change.
CM100DC-24NFM
Caution: No short circuit capability is designed.
IC ・・・・・・・・・・・・・・・・・・・・・・・・・・・・ 100A
VCES ・・・・・・・・・・・・・・・・・・・・・・・・ 1200V
Insulated Type
2-elements in a pack
APPLICATION
High frequency switching use & Resonant inverter power supply, etc
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise specified)
Symbol
Item
Conditions
VCES Collector-emitter voltage
VGES Gate-emitter voltage
IC Collector current
ICM
IE
IEM
*3
*3 Emitter current
PC *5 Maximum collector dissipation
Tj Junction temperature
Tstg Storage temperature
Viso Isolation voltage
- Torque strength
G-E Short
C-E Short
Operation
Pulse *4
Operation
Pulse *4
TC=25°C *1
Main terminal to base plate, AC 1 min.
Main terminal M6
- Torque strength
Mounting holes M6
- Weight
Typical value
Ratings
1200
± 20
100
200
100
200
670
- 40 ~ +150
- 40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
375
Units
V
V
A
A
W
°C
°C
V
Nm
Nm
g
TENTATIVE
TSM-1860
1-3



CM100DC-24NFM
APPLICATION NOTE
MITSUBISHI<IGBT MODULE>
CM100DC-24NFM
HIGH POWER SWITCHING USE
──────────────────────────────────────────────────
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified)
Symbol
Item
Conditions
Min. Typ. Max. Units
ICES
VGE(th)
Collector cutoff current
Gate-emitter
threshold voltage
VCE=VCES, VGE=0V
IC=10mA, VCE=10V
- - 1 mA
4.5 6.0 7.5
V
IGES
VCE(sat)
Gate leakage current
Collector to emitter
saturationvoltage
±VGE=VGES, VCE=0V
IC=100A *6
Tj=25°C
VGE=15V
Tj=125°C
- - 0.5 μA
- 3.0 4.5 V
- 3.0 -
Cies Input capacitance
Coes Output capacitance
Cres Reverse transfer capacitance
VGE=0V, VCE=10V *6
- - 16
- - 1.3 nF
- - 0.3
QG Total gate charge
VCC=600V, IC=100A, VGE=15V - 450 -
nC
td(on) Turn-on delay time
VCC=600V, IC=100A
- - 100
tr Turn-on rise time
VGE1=VGE2=15V, RG=3.1
- - 50
td(off) Turn-off delay time
Inductive load
- - 250 ns
tf Turn-off fall time
trr *3 Reverse recovery time
Qrr *3 Reverse recovery charge
VEC *3 Emitter-collector voltage
Rth(j-c)Q Thermal resistance
Rth(j-c)R
Rth(c-f) Contact thermal resistance
switching operation
IE=100A
IE=100A, VGE=0V
IGBT part (1/2 module) *1
FWDi part (1/2 module) *1
Case to fin,
Thermal grease applied
(1/2module) *1 *2
- 60 200
- 70 120
- 6 μC
- 2.0 3.0 V
- - 0.186
- - 0.28
°C/W
- 0.02 -
RG External gate resistance
3.1 - 31
*1: TC, Tf measured point is just under the chips.
*2: Typical value is measured by using Shin-Etsu Chemical Co.,Ltd "G-747".
*3: IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel
diode (FWDi).
*4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not
exceed Tjmax rating.
*5: Junction temperature (Tj) should not increase beyond 150°C.
*6: Pulse width and repetition rate should be such as to cause neglible temperature rise.
TENTATIVE
TSM-1860
2-3



CM100DC-24NFM
APPLICATION NOTE
MITSUBISHI<IGBT MODULE>
CM100DC-24NFM
HIGH POWER SWITCHING USE
──────────────────────────────────────────────────
OUTLINE DRAWING
Dimensions in mm
CIRCUIT DIAGRAM
C2E1
E2
C1
TENTATIVE
TSM-1860
3-3







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