CMPA1D1E080F
80 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN, Power Amplifier
Cree’s CMPA1D1E080F is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based Monolithic Microwave Integrated Circuit (MMIC). It is designed specifically for high efficiency, high gain, and wide bandwidth capabilities while meeting OQPSK linearity, which makes CMPA1D1E08...
