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CNY171TM Optocouplers Datasheet PDF

Phototransistor Optocouplers

Phototransistor Optocouplers

 

 

 

Part Number CNY171TM
Description Phototransistor Optocouplers
Feature CNY17 Series, MOC8106M 6-Pin DIP High BV CEO Phototransistor Optocouplers Descri ption The CNY17XM, CNY17FXM, and MOC810 6M devices consist of a gallium arsenid e infrared emitting diode coupled with an NPN phototransistor in a dual in−l ine package.
Features
• High BVCEO: 7 0 V Minimum (CNY17XM, CNY17FXM, MOC8106 M)
• Closely Matched Current Transfer Ratio (CTR) Minimizes Unit−to−Unit Variation
• Current Transfer Ratio I n Select Groups
• Very Low Coupled Ca pacitance Along With No Chip−to−Pin 6 Base Connection for Minimum Noise Su sceptibility (CNY17FXM, MOC8106M)
• S afety and Regulatory Approvals: ♦ .
Manufacture ON Semiconductor
Datasheet
Download CNY171TM Datasheet

CNY171TM

 

 

 


 

 

 

Part Number CNY171TM
Description Phototransistor Optocouplers
Feature CNY17 Series, MOC8106M 6-Pin DIP High BV CEO Phototransistor Optocouplers Descri ption The CNY17XM, CNY17FXM, and MOC810 6M devices consist of a gallium arsenid e infrared emitting diode coupled with an NPN phototransistor in a dual in−l ine package.
Features
• High BVCEO: 7 0 V Minimum (CNY17XM, CNY17FXM, MOC8106 M)
• Closely Matched Current Transfer Ratio (CTR) Minimizes Unit−to−Unit Variation
• Current Transfer Ratio I n Select Groups
• Very Low Coupled Ca pacitance Along With No Chip−to−Pin 6 Base Connection for Minimum Noise Su sceptibility (CNY17FXM, MOC8106M)
• S afety and Regulatory Approvals: ♦ .
Manufacture ON Semiconductor
Datasheet
Download CNY171TM Datasheet

CNY171TM

 

 

 

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