6-Pin DIP High BVCEO Phototransistor Optocouplers
CNY17 Series, MOC8106M
Description The CNY17XM, CNY17FXM, and MOC8106M devices consist of
a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package.
Features
High BVCEO: 70 V Minimum
(CNY17XM, CNY17FXM, MOC8106M)
Closely Matched Current Transfer Ratio (CTR) M...
