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MOSFET. CS2N60F Datasheet

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MOSFET. CS2N60F Datasheet







CS2N60F Datasheet PDF




CS2N60F Datasheet PDF


Part Number

CS2N60F

Description

Silicon N-Channel Power MOSFET

Feature Huajing Discrete Devices Silicon General Description: CS2N60F A9H, the silico n N-channel Enhanced VDMOSFETs, is obta ined by the self-aligned planar Technol ogy which reduce the conduction loss, i mprove switching performance and enhanc e the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. T.
Manufacture

HUAJING

Datasheet
Download CS2N60F Datasheet

CS2N60F












Part Number

CS2N60F

Description

VDMOS Transistor

Feature CS2N60(F) CS2N60(F) VDMOS 1. CS2N60( F) N 600V VDMOS ,、 。 : ● ● ● : CS2N60 CS2N60F TO-2 20 TO-220F VDSS 600V RDS(ON)MAX 4.6Ω ID 2.1A 2. 2.1 (,TC=25℃) () () () () 2.2 (,TC =25℃) 2.2.1 CS4N60 600 2. 1 8.4 ±30 84 2.3 62.5 54 150 CS4N60F V A V mJ VDSS ID IDM VGS EAS RθJC R θJA PD TJ TSTG 5.5 62.5 23 -55~150 ℃/W W ℃ BVDSS ∆BVDSS/∆TJ.
Manufacture

ETC

Datasheet
Download CS2N60F Datasheet

CS2N60F









Part Number

CS2N60F

Description

N-CHANNEL MOSFET

Feature BRF2N60(CS2N60F) : DC/DC 。 N-CHANNEL MOSFET/N MOS Purpose: These devices are well suited for high efficiency sw itching DC/DC converters and switch mod e power supplies. : ,,。 Features: Lo w gate charge ,low crss, fast switching . /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃ ) ID(Tc=100℃) IDM VGSS EAS EAR IAR PD (Tc=25℃) TJ,TSTG 600 2.0 1..
Manufacture

LZG

Datasheet
Download CS2N60F Datasheet

CS2N60F



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