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CS60N06AQ3

Huajing Microelectronics

Silicon N-Channel Power MOSFET


Description
Silicon N-Channel Power Trench MOSFET CS60N06 AQ3 ○R General Description: CS60N06 AQ3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system mi...



Huajing Microelectronics

CS60N06AQ3

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