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CT20ASJ-8
IGBT
Description
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20ASJ-8 STROBE FLASHER USE CT20ASJ-8 OUTLINE DRAWING 1.5 ± 0.2 6.5 5.0 ± 0.2 4 Dimensions in mm 0.5 ± 0.1 5.5 ± 0.2 1.0MAX. 1.0 0.9MAX. 2.3MIN. 10MAX. 0.5 ± 0.2 2.3 2.3 0.8 2.3 1 2 3 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e q ¡VCES ...............................................................
Mitsubishi Electric Semiconductor
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