CT3A01-R3 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 20 V Drain-Source On-Resistance
RDS(ON) 55mΩ, at VGS= 4.5V, ID=3.2A RDS(ON) 65mΩ, at VGS= 2.5V, ID= 2.5A RDS(ON) 80mΩ, at VGS= 1.8V, ID= 2.0A
℃ Continuous Drain Current at TA=25 ID = 3.2A
Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
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