TRANSISTOR. CT90AM-18 Datasheet

CT90AM-18 Datasheet PDF


CT90AM-18
To all our customers
www.DataSheet4U.com
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003


Part CT90AM-18
Description MITSUBISHI Nch IGBT INSULATED GATE BIPOLAR TRANSISTOR
Feature CT90AM-18; To all our customers www.DataSheet4U.com Regarding the change of names mentioned in the document, s.
Manufacture Renesas Technology
Datasheet
Download CT90AM-18 Datasheet


To all our customers www.DataSheet4U.com Regarding the chan CT90AM-18 Datasheet
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRA CT90AM-18 Datasheet





CT90AM-18
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CT90AM-18
MITMSIUTBSIUSBHIISNHcI hNIcGhBIGT BT
CT90CATM90-A1M8-18
INSIUNLSAUTLEADTEGDATGEATBEIPBOILPAORLATR ATNRSAINSSTIOSRTOR
OUTLINE DRAWING
20MAX.
Dimensions in mm
5
2
φ3.2 
2
1
ŒŽ
5.45 5.45
0.5
3
q VCES ............................................................................... 900V
q IC .........................................................................................60A
4.0

q Simple drive
q Integrated Fast-recovery diode
q Small tail loss
ΠGATE
Œ
 COLLECTOR
Ž EMITTER
 COLLECTOR
q Low VCE Saturation Voltage
Ž
TO-3PL
APPLICATION
Microwave oven, Electoromagnetic cooking devices, Rice-cookers
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VCES
VGES
VGEM
IC
ICM
IE
PC
Tj
Tstg
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulsed)
Emitter current
Maximum power dissipation
Junction temperature
Storage temperature
VGE = 0V
Conditions
Ratings
900
±25
±30
60
120
40
250
–40 ~ +150
–40 ~ +150
Unit
V
V
V
A
A
A
W
°C
°C
Sep. 2000



CT90AM-18
www.DataSheet4U.com
MITSUBISHI Nch IGBT
CT90AM-18
INSULATED GATE BIPOLAR TRANSISTOR
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
ICES
IGES
VGE (th)
VCE (sat)
Cies
Coes
Cres
td (on)
tr
td (off)
tf
Etail
Itail
VEC
trr
Rth (ch-c)
Rth (ch-c)
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Tail loss
Tail current
Emitter-collector voltage
Diode reverse recovery time
Thermal resistance
Thermal resistance
VCE = 900V, VGE = 0V
VGE = ±20V, VCE = 0V
VCE = 10V, IC = 6mA
IC = 60A, VGE = 15V
VCE = 25V, VGE = 0V, f = 1MHz
VCC = 300V, IC = 60A, VGE = 15V, RG = 0
ICP = 60A, Tj = 125°C, dv/dt = 200V/µs
IE = 60A, VGE = 0V
IE = 60A, dis/dt = –20A/µs
Junction to case
Junction to case
Limits
Unit
Min. Typ. Max.
— — 1.0 mA
— — ±0.5 µA
2.0 4.0 6.0 V
1.55 1.95
V
— 11000 —
pF
— 180 — pF
— 125 — pF
— 0.05 — µs
— 0.10 — µs
— 0.20 — µs
— 0.30 — µs
— 0.6 1.0 mJ/pls
— 6 12 A
— — 3.0 V
— 0.5 2.0 µs
— — 0.5 °C/W
— — 4.0 °C/W
Sep. 2000




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