CT90AM-18 Datasheet
Part Number |
CT90AM-18 |
Manufacturers |
Mitsubishi Electric |
Logo |
|
Description |
Insulated Gate Bipolar Transistor |
Datasheet |
CT90AM-18 Datasheet (PDF) |
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR
CT90AM-18
OUTLINE DRAWING
20MAX.
w
q VCES .... 900V q IC .... 60A q Simple drive q Integrated Fast-recovery diode q Small tail loss q Low VCE Saturation Voltage
1
0.5 3
5.45 5.45
4.0
GATE COLLECTOR EMITTER COLLECTOR
TO-3PL
APPLICATION Microwave oven, Electoromagnetic cooking devices, Rice-cookers
MAXIMUM RATINGS
Symbol VCES VGES VGEM IC ICM IE PC Tj Tstg
(Tc = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Emitter current Maximum power dissipation Junction temperature Storage temperature VGE = 0V
Conditions
Ratings 900 ± 25 ± 30 60 120 40 250 –40 ~ +150 –40 ~ +150
Unit V V V A A A W °C °C Sep. 2000
ww.DataSheet4U.com
20.6MIN.
w
2
2.
Part Number |
CT90AM-18 |
Manufacturers |
Renesas Technology |
Logo |
|
Description |
MITSUBISHI Nch IGBT INSULATED GATE BIPOLAR TRANSISTOR |
Datasheet |
CT90AM-18 Datasheet (PDF) |
To all our customers
www.DataSheet4U.com
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your.
Insulated Gate Bipolar Transistor
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR
CT90AM-18
OUTLINE DRAWING
20MAX.
w
q VCES .... 900V q IC .... 60A q Simple drive q Integrated Fast-recovery diode q Small tail loss q Low VCE Saturation Voltage
1
0.5 3
5.45 5.45
4.0
GATE COLLECTOR EMITTER COLLECTOR
TO-3PL
APPLICATION Microwave oven, Electoromagnetic cooking devices, Rice-cookers
MAXIMUM RATINGS
Symbol VCES VGES VGEM IC ICM IE PC Tj Tstg
(Tc = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Emitter current Maximum power dissipation Junction temperature Storage temperature VGE = 0V
Conditions
Ratings 900 ± 25 ± 30 60 120 40 250 –40 ~ +150 –40 ~ +150
Unit V V V A A A W °C °C Sep. 2000
ww.DataSheet4U.com
20.6MIN.
w
2
2.5
w
m o CT90AM-18 .c CT90AM-18 u 4 t e e h s a t a d .
MITSUBISHI Nch IGBT MITSUBISHI Nch IGBT
Dimensions in mm
5 2 φ3.2
6 1 26
MITSUBISHI Nch IGBT
CT90AM-18
INSULATED GATE BIPOLAR TRANSISTOR
ELECTRICAL CHARACTERISTICS
Symbol ICES IGES VGE (th) VCE (sat) Cies Coes Cres td (on) tr td (off) tf Etail Itail VEC trr Rth (ch-c) Rth (ch-c) Parameter
(Tj = 25° C)
Test conditions VCE = 900V, VGE = 0V VGE = ± 20V, VCE = 0V VCE = 10V, IC = 6mA IC = 60A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz
L.
2005-11-17 : ICS950405 ICS950401 ICS950227 ICS950223 ICS950208 ICS950202 ICS950104 LM4024-11EWRN LM4034-11EWRN LM4044-11EWRN