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CT90AM-18 Datasheet

Part Number CT90AM-18
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description Insulated Gate Bipolar Transistor
Datasheet CT90AM-18 DatasheetCT90AM-18 Datasheet (PDF)

  CT90AM-18   CT90AM-18
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR CT90AM-18 OUTLINE DRAWING 20MAX. w q VCES .... 900V q IC .... 60A q Simple drive q Integrated Fast-recovery diode q Small tail loss q Low VCE Saturation Voltage 1 Œ  Ž 0.5 3 5.45 5.45 4.0  Œ GATE  COLLECTOR Ž EMITTER  COLLECTOR Œ TO-3PL APPLICATION Microwave oven, Electoromagnetic cooking devices, Rice-cookers MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM IE PC Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Emitter current Maximum power dissipation Junction temperature Storage temperature VGE = 0V Conditions Ratings 900 ± 25 ± 30 60 120 40 250 –40 ~ +150 –40 ~ +150 Unit V V V A A A W °C °C Sep. 2000 ww.DataSheet4U.com Ž 20.6MIN. w 2 2.






Part Number CT90AM-18
Manufacturers Renesas Technology
Logo Renesas Technology
Description MITSUBISHI Nch IGBT INSULATED GATE BIPOLAR TRANSISTOR
Datasheet CT90AM-18 DatasheetCT90AM-18 Datasheet (PDF)

  CT90AM-18   CT90AM-18
To all our customers www.DataSheet4U.com Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your.






Insulated Gate Bipolar Transistor

INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR CT90AM-18 OUTLINE DRAWING 20MAX. w q VCES .... 900V q IC .... 60A q Simple drive q Integrated Fast-recovery diode q Small tail loss q Low VCE Saturation Voltage 1 Œ  Ž 0.5 3 5.45 5.45 4.0  Œ GATE  COLLECTOR Ž EMITTER  COLLECTOR Œ TO-3PL APPLICATION Microwave oven, Electoromagnetic cooking devices, Rice-cookers MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM IE PC Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Emitter current Maximum power dissipation Junction temperature Storage temperature VGE = 0V Conditions Ratings 900 ± 25 ± 30 60 120 40 250 –40 ~ +150 –40 ~ +150 Unit V V V A A A W °C °C Sep. 2000 ww.DataSheet4U.com Ž 20.6MIN. w 2 2.5 w m o CT90AM-18 .c CT90AM-18 u 4 t e e h s a t a d . MITSUBISHI Nch IGBT MITSUBISHI Nch IGBT Dimensions in mm 5 2 φ3.2 6 1 26  MITSUBISHI Nch IGBT CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR ELECTRICAL CHARACTERISTICS Symbol ICES IGES VGE (th) VCE (sat) Cies Coes Cres td (on) tr td (off) tf Etail Itail VEC trr Rth (ch-c) Rth (ch-c) Parameter (Tj = 25° C) Test conditions VCE = 900V, VGE = 0V VGE = ± 20V, VCE = 0V VCE = 10V, IC = 6mA IC = 60A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz L.



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