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CTH11055NS
N-Channel MOSFET
Description
CTH11055NS N-Channel Enhancement
MOSFET
Features Drain-Source Breakdown
Voltage
VDSS 55V Drain-Source On-Resistance RDS(ON) 8m, at VGS= 10, ID= 59A Continuous Drain Current at TC=25℃ID =110A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free Description These Power
MOSFET
s utilizes Advanced Trench Process Technology whic...
CT Micro
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