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CTH1706PS-T52

Part Number	CTH1706PS-T52
Manufacturer	CT Micro
Description	P-Channel MOSFET
Published	May 20, 2020
Detailed Description	CTH1706PS-T52 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS-60V  Drain-Source On-Resista...
Datasheet	CTH1706PS-T52 PDF File

Overview

CTH1706PS-T52 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS-60V  Drain-Source On-Resistance RDS(ON) 65m, at VGS= -10V, ID= -20A RDS(ON) 80m, at VGS= -4.
5V, ID= -16A  Continuous Drain Current at TC=25℃ID =-17A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH1706PS-T52 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Applications  Switching Applications  DC/DC Converter  IPC Package Outline Schematic Drain Gate Source Drain Gate Source...

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