CTL0025NS-R3 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 50 V Drain-Source On-Resistance
RDS(ON) 1.3Ω, at VGS= 10V, ID= 0.2A RDS(ON) 1.4Ω, at VGS= 5V, ID= 0.2A RDS(ON) 1.6Ω, at VGS= 2.5V, ID= 0.2A
℃ Continuous Drain Current at TA=25 ID = 0.2A
Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
A...
