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CTL1103NS
N-Channel MOSFET
Description
CTL1103NS N-Channel Enhancement
MOSFET
Features Drain-Source Breakdown
Voltage
VDSS 30 V Drain-Source On-Resistance RDS(ON) 8.5m, at VGS= 10V, IDS= 5.5A RDS(ON) 12m, at VGS= 4.5V, IDS= 5.5A Continuous Drain Current at TC=25℃ ID = 11A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free Applications Power Management Lit...
CT Micro
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