CTLM17NS10-R3 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 100 V Drain-Source On-Resistance
RDS(ON) 3Ω, at VGS= 10V, ID= 100mA RDS(ON) 3Ω, at VGS= 4.5V, ID= 100mA
℃ Continuous Drain Current at TA=25 ID =0.17A
Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTLM17NS10-R3 is th...
