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CUHS15S40

Part Number	CUHS15S40
Manufacturer	Toshiba
Description	Schottky Barrier Diode
Published	Jul 27, 2019
Detailed Description	Schottky Barrier Diode Silicon Epitaxial CUHS15S40 1. Applications • High-Speed Switching 2. Packaging and Internal Circ...
Datasheet	CUHS15S40 PDF File

Overview

Schottky Barrier Diode Silicon Epitaxial CUHS15S40 1.
Applications • High-Speed Switching 2.
Packaging and Internal Circuit CUHS15S40 1: Cathode 2: Anode US2H 3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 40 V Average rectified current IO (Note 1) 1.
5 A Non-repetitive peak forward surge current IFSM (Note 2) 10 A Junction temperature Tj 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability ...

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