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D213 Datasheet PDF

DC/DC Converters


D213 | ETC
Single & Dual Output Miniature 2W SIP DC/DC Converters
Download D213 Datasheet
Download D213 Datasheet

www.DataSheet4U.com D200 Series Single & Dual Output Miniature, 2W SIP DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Input Key Features: Parameter Conditions Min. Typ. Max. 5.5 13.2 26.4 52.8 0.3 Units ● 2W Output Power ● Miniature SIP Case Input Voltage Range ● Single & Dual Outputs ● 1,000 VD.

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D2139 | Panasonic Semiconductor
2SD2139
Download D2139 Datasheet
Download D2139 Datasheet

Power Transistors 2SD2139 Silicon NPN triple diffusion planar type For high-current amplification ratio, power amplification Unit: mm s Features 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C) Ratings 80 60 6 6 3 1 15 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 90° 1.2±0.1 18.0±0.5 Solder .

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D2137 | Panasonic Semiconductor
2SD2137
Download D2137 Datasheet
Download D2137 Datasheet

Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A Unit: mm s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 s Absolute Maximum Ratings Parameter Collector to www.DataSheet4U.com base vo.

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D213 | ETC
Single & Dual Output Miniature 2W SIP DC/DC Converters
Download D213 Datasheet
Download D213 Datasheet
www.DataSheet4U.com D200 Series Single & Dual Output Miniature, 2W SIP DC/DC Converters Electrical .
www.DataSheet4U.com D200 Series Single & Dual Output Miniature, 2W SIP DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Input Key Features: Parameter Conditions Min. Typ. Max. 5.5 13.2 26.4 52.8 0.3 Units ● 2W Output Power ● Miniature SIP Case Input Voltage Range ● Single & Dual Outputs ● 1,000 VD.


D2131 | Toshiba
2SD2131
Download D2131 Datasheet
Download D2131 Datasheet
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2131 2SD2131 High-Power Switch.
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2131 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) • Zener diode included between collector and base. • Unclamped inductive load energy: E = 150 mJ (min) Absolute Maximum Ratings (Tc = 25°C) Characteris.


D2132 | Rohm
NPN SIlicon Transistor
Download D2132 Datasheet
Download D2132 Datasheet
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D2135 | Panasonic
Silicon NPN Power Transistor
Download D2135 Datasheet
Download D2135 Datasheet
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D2136 | Panasonic Semiconductor
2SD2136
Download D2136 Datasheet
Download D2136 Datasheet
www.DataSheet.co.kr Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power a.
www.DataSheet.co.kr Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 7.5±0.2 Unit: mm 4.5±0.2 16.0±1.0 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ ■ Features 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.1.


 

 

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