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D2204

Part Number	D2204
Manufacturer	Toshiba Semiconductor
Description	2SD2204
Published	May 14, 2014
Detailed Description	2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pul...
Datasheet	D2204 PDF File

Overview

2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.
5 A) Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 1.
5 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC I Pulse I ymbol VCBO VCEO VEBO C CP Rating 65 ± 10 65 ± 10 7 4 6 0.
5 2.
0 25 Unit V V V A A W °C IB PC Tj 150 Tstg JEDEC JEITA TOSHIBA ― SC-67 2-10R1A −5...

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