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FIELD EFFECT POWER TRANSISTOR
IRF230,231 D86DN2,M2
9.0 AMPERES 200,150 VOLTS
ROS(ON} = 0.4 n
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power OMOS technology to achieve low on-resistance with excellent device ruggedness and reliability,
This design has been optimized to give superior performance in most switching ...
