~[RjD~~
FIELD EFFECT POWER TRANSISTOR
IRF330,331 086002,01
5.5 AMPERES 400, 350 VOLTS ROS(ON) = 1.0!l
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switchin...
