Part Number | DE275-102N06A |
Manufacturer | IXYS Corporation |
Title | RF Power MOSFET |
Description | DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switchi... |
Features | • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power •... |
Published | Apr 28, 2011 |
Datasheet | DE275-102N06A PDF File |