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DE275-102N06A

IXYS Corporation
Part Number DE275-102N06A
Manufacturer IXYS Corporation
Title RF Power MOSFET
Description DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switchi...
Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power •...
Published Apr 28, 2011
Datasheet PDF File DE275-102N06A PDF File


DE275-102N06A
DE275-102N06A


Features

• Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power

• − −


• cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low...



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