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DSR01S30SL
Schottky Barrier Diode
Description
Schottky Barrier Diode Silicon Epitaxial DSR01S30SL 1. Applications High-Speed Switching 2. Features (1) Low reverse current: IR = 0.7 µA (max) @ VR = 30 V 3. Packaging and Internal Circuit DSR01S30SL 1: Cathode 2: Anode SL2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse v...
Toshiba
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DSR01S30SC
Silicon Epitaxial Schottky Barrier Type Diode
- Toshiba Semiconductor
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