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DTA123E Datasheet

Part Number DTA123E
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP SILICON BIAS RESISTOR TRANSISTOR
Datasheet DTA123E DatasheetDTA123E Datasheet (PDF)

  DTA123E   DTA123E
DTA114E SERIES Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO–92 package which is designed for through hole applications. http://onsemi.com Preferred Devices PNP SILICON BIAS RESISTOR TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25°C (1.) Derate above 25°C Symbol VCBO VCEO IC PD 350 2.81 mW mW/°C Value 50 50 100 Unit Vdc Vdc mAdc 2 BASE COLLECT.






Part Number DTA123E
Manufacturers Rohm
Logo Rohm
Description PNP -100mA -50V Digital Transistors
Datasheet DTA123E DatasheetDTA123E Datasheet (PDF)

  DTA123E   DTA123E
DTA123E series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet Outline Parameter Value VMT3 VCC IC(MAX.) R1 R2 50V 100mA 2.2k 2.2k OUT IN GND DTA123EM (SC-105AA) Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2k. 2) Built-in bias resistors enable the configuration of UMT3 OUT IN GND an inverter circuit without connecting external input resistors (see equivalent circuit). DTA123EUA SOT-323 (SC-70) 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing Inner circuit of the input. They also have the advantage of completely eliminating parasitic effects. R1 IN 4) Only the on/off con.






Part Number DTA123E
Manufacturers UTC
Logo UTC
Description DIGITAL TRANSISTORS
Datasheet DTA123E DatasheetDTA123E Datasheet (PDF)

  DTA123E   DTA123E
www.DataSheet4U.com UNISONIC TECHNOLOGIES CO., LTD DTA123E PNP EPITAXIAL SILICON TRANSISTOR 3 DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input. 2 3 1 SOT-23 EQUIVALENT CIRCUIT R1 IN R2 OUT 2 3 1 SOT-323 2 GND IN GND OUT 1 SOT-523 *Pb-free plating product number:DTA123EL ORDERING INFORMATION Order Number Normal Lead Free Plating DTA123E-AE3-6-R DTA123EL-AE3-6-R DTA123E-AL3-6-R DTA123EL-AL3-6-R DTA123E-AN3-6-R DTA123EL-AN3-6-R Package SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 G I O G I O G I O Packing Tape Reel Tape.






PNP SILICON BIAS RESISTOR TRANSISTOR

DTA114E SERIES Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO–92 package which is designed for through hole applications. http://onsemi.com Preferred Devices PNP SILICON BIAS RESISTOR TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25°C (1.) Derate above 25°C Symbol VCBO VCEO IC PD 350 2.81 mW mW/°C Value 50 50 100 Unit Vdc Vdc mAdc 2 BASE COLLECTOR 3 1 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol RθJA TJ, Tstg TL 260 10 Value 357 –55 to +150 Unit °C/W °C 1 2 3 °C Sec DEVICE MARKING AND RESISTOR VALUES Device DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z Marking DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E.



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