an AMP company
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RF M’OSFET 2 - 175 MHz
Features
Power Transistor,
4OW,28V
DU2840S
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
. .
Absolute Maximum Ratings at 25°C
Parameter Drain-Source Gate-Source Drain-Source VoltageVoltage Cu...
