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EIB1818-2P FET Datasheet PDF

Internally Matched Power FET

Internally Matched Power FET

　

　

Part Number EIB1818-2P
Description Internally Matched Power FET
Feature Excelics
•
•
•
•
•
• 18.
15-18.
75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.
0/+32.
5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.
0/5.
0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1818-2P Not recommended for new designs.
Contact factory.
Effective 03/2003 18.
15-18.
75GHz, 2W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1818-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=18.
15-18.
75GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Ids.
Manufacture Excelics Semiconductor
Datasheet
Download EIB1818-2P Datasheet
Part Number EIB1818-2P
Description Internally Matched Power FET
Feature Excelics
•
•
•
•
•
• 18.
15-18.
75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.
0/+32.
5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.
0/5.
0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1818-2P Not recommended for new designs.
Contact factory.
Effective 03/2003 18.
15-18.
75GHz, 2W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1818-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=18.
15-18.
75GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Ids.
Manufacture Excelics Semiconductor
Datasheet
Download EIB1818-2P Datasheet

EIB1818-2P
EIB1818-2P   EIB1818-2P

　

　

　

　

　

Part Number EIB1818-2P
Description 18.15-18.75GHz 2W Internally Matched Power FET
Feature Excelics
•
•
•
•
•
• 18.
15-18.
75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.
0/+32.
5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.
0/5.
0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1818-2P Not recommended for new designs.
Contact factory.
Effective 03/2003 18.
15-18.
75GHz, 2W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1818-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=18.
15-18.
75GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Ids.
Manufacture Excelics Semiconductor
Datasheet
Download EIB1818-2P Datasheet
Part Number EIB1818-2P
Description 18.15-18.75GHz 2W Internally Matched Power FET
Feature Excelics
•
•
•
•
•
• 18.
15-18.
75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.
0/+32.
5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.
0/5.
0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1818-2P Not recommended for new designs.
Contact factory.
Effective 03/2003 18.
15-18.
75GHz, 2W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1818-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=18.
15-18.
75GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Ids.
Manufacture Excelics Semiconductor
Datasheet
Download EIB1818-2P Datasheet

EIB1818-2P
EIB1818-2P   EIB1818-2P

　

　

　

　

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