40 V, 80 A, 3.1 mΩ Low RDS(ON) N ch Trench Power MOSFET
EKI04036
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 80 A RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 58.5 A) Qg------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A)
Low Total Gate Charge High Speed ...
