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MOSFET. EMH1307 Datasheet |
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Ordering number : ENA1715A
EMH1307
P-Channel Power MOSFET
–20V, –6.5A, 26mΩ, Single EMH8
http://onsemi.com
Features
• ON-resistance RDS(on)1 : 20mΩ(typ.)
• 1.8V drive
• Protection diode in
• Input Capacitance Ciss=1100pF(typ.)
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm2×0.8mm)
Ratings
--20
±10
--6.5
--26
1.5
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-001
0.2
8
5
0.125 EMH1307-TL-H
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Taping Type : TL
Marking
1
0.5
2.0
4
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
EMH8
TL
Electrical Connection
876 5
JG
Lot No.
12 3 4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/O2010PE TKIM TC-00002339 No. A1715-1/7
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EMH1307
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--3A
ID=--3A, VGS=--4.5V
ID=--1.5A, VGS=--2.5V
ID=--0.5A, VGS=--1.8V
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--6.5A
IS=--6.5A, VGS=0V
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
PW=10μs
D.C.≤1%
G
VDD= --10V
ID= --3A
RL=3.33Ω
D VOUT
EMH1307
P.G 50Ω S
min
--20
Ratings
typ
--0.4
8.2
20
31
49
1100
210
160
12.8
55
120
88
13
1.9
3.7
--0.8
max
--1
±10
--1.3
26
44
78
--1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
EMH1307-TL-H
Package
EMH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1715-2/7
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EMH1307
--7 ID -- VDS
Ta=25°C
--6
--1.6V
--5
--4
--3
--2 VGS= --1.5V
--1
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
80 Drain-Rto-DSSou(rocenV) ol-t-ageV, GVDSS -- V IT15992
Ta=25°C
70 ID= --0.5A
--1.0A
60
--3.0A
50
40
30
20
10
0
0 --2 --4 --6 --8 --10 --12
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
IT15994
3
2 VDS= --10V
10
7
5
25°C
3
2
Ta=
--25°C
75°C
1.0
7
5
3
2
0.1
--0.01
1000
7
5
23
5 7 --0.1 2 3 5 7 --1.0
Drain
SW
Current,
Time
I-D-
-- A
ID
2 3 57
IT15996
VDD= --10V
VGS= --4.5V
3
2
td(off)
100 tf
7
5
3
2
10
7
--0.01
23
tr
td(on)
5 7 --0.1 2 3 5 7 --1.0
Drain Current, ID -- A
23
5 7 --10
IT15998
--10
VDS= --10V
--9
ID -- VGS
--8
--7
--6
--5
--4
--3
--2
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
80
Gate-to-Source Voltage,
RDS(on) --
TVaGS
--
V
IT15993
70
60
50
VGS= --1.8V, ID= --0.5A
40
30
20
VVGGSS==----24..55VV,,IIDD==----13.0.0AA
10
0
--60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT15995
2 IS -- VSD
--10 VGS=0V
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
3
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-D
-- V
VDS
IT15997
f=1MHz
2
1000
7
5
Ciss
3
2
100
7
0
Coss
Crss
--2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Drain-to-Source Voltage, VDS -- V IT15999
No. A1715-3/7
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