eGaN® FET DATASHEET
EPC2111 – Enhancement-Mode GaN Power Transistor Half-Bridge
VDS , 30 V RDS(on) , 19 mΩ (Q1), 8 mΩ (Q2) ID , 16 A (Q1), 16 A (Q2)
EPC2111
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier ...
