• 16.5A, 500V, RDS(on) = 0.38Ω @VGS = 10 V
• Low gate charge ( typical 32 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability April 2007 UniFETTM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild...
FDA16N50 PDF File
