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FDC610PZ

Fairchild Semiconductor

MOSFET


Description
FDC610PZ P-Channel PowerTrench® MOSFET FDC610PZ P-Channel PowerTrench® MOSFET –30V, –4.9A, 42mΩ Features General Description August 2007 tm „ Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A „ Max rDS(on) = 75mΩ at VGS = –4.5V, ID = –3.7A „ Low gate charge (17nC typical). „ High performance trench technology for extremely low rDS(on). „ SuperSOTTM –6 packag...



Fairchild Semiconductor

FDC610PZ

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