• rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A
• rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low rDS(ON)
• Low gate charge
• High power and current handling capability
• Qualified to AEC Q101
• RoHS Compliant D G S DTO-P-2A5K2 (TO-252) MOSFET Maximum Ratings TC...
FDD8870-F085 PDF File
