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FDG6313N

Fairchild Semiconductor

Dual N-Channel Digital FET


Description
www.DataSheet4U.com April 2002 FDG6313N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designe...



Fairchild Semiconductor

FDG6313N

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