MOSFET
Description
FDMC86012 N-Channel Power Trench® MOSFET
October 2012
FDMC86012
N-Channel Power Trench® MOSFET
30 V, 88 A, 2.7 mΩ
Features
Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 23 A Max rDS(on) = 4.7 mΩ at VGS = 2.5 V, ID = 17.5 A High performance technology for extremely low rDS(on) Termination is Lead-free 100% UIL Tested RoHS Compliant
General Descrip...
Similar Datasheet
