General Description
Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A Very low RDS-on mid voltage P channel silicon technology
optimised for low Qg
This P-Channel MOSFET is produced using Fairchil...
FDMC86139P PDF File
