General Description
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 25 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package ...
FDMS0300S PDF File
