FDMS7580 N-Channel Power Trench® MOSFET
October 2014
FDMS7580
N-Channel Power Trench® MOSFET
25 V, 7.5 mΩ
Features
General Description
Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 12 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode tech...
