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FDMS86181
N-Channel Shielded Gate PowerTrench MOSFET
Description
FDMS86181 N-Channel Shielded Gate PowerTrench®
MOSFET
FDMS86181 December 2015 N-Channel Shielded Gate PowerTrench®
MOSFET
100 V, 124 A, 4.2 mΩ Features Shielded Gate
MOSFET
Technology Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A ADD 50% lower Qrr than other
MOSFET
suppliers Lowers switching noise/E...
Fairchild Semiconductor
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