General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 7.65 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 7.2 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
This N-Channel MOS...
FDMS86322 PDF File
