FDN306P
December 2001
FDN306P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
–2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V RDS(ON) = 80 ...
