• 20A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
• Low gate charge ( typical 36.8 nC)
• Low Crss ( typical 39 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability UniFET Description May 2006 TM These N-Channel enhancement mode power field effect transistors are produced using Fairch...
FDPF33N25 PDF File
