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FDS6900AS
Dual N-Ch PowerTrench SyncFET
Description
FDS6900AS May 2005 FDS6900AS General Description Dual N-Ch PowerTrench® SyncFET™ Features Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 28mΩ @ VGS = 4.5V Q1: Optimized for low switching losses Low Gate Charge (11nC typical) RDS(on) = 27mΩ @ VGS = 10V RDS(on) = 34mΩ @ VGS = 4.5V ...
Fairchild Semiconductor
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